2SA1068 Datasheet and Specifications PDF

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP.

turation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -3A; VCE= -4V fT Current-Gain
*Bandwidth Product IC= -0.5A; VCE= -10V 2SA1.

·With TO-3 package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·For audio and general purpose amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector F.

ge IC=-25mA ;IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.5 V ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC curren.