| Part Number | 2SA1069 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching, and is idea. L PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -3.0A ; IB= -0.3A, L=1mH VCE(sat) Collector-Emitter Saturation Voltage IC= -3.0A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -3.0A; IB= -0.3A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter C. |
2SA1069 Datasheet
The 2SA1069 is a POWER TRANSISTOR.
| Part Number | 2SA1069 |
|---|---|
| Description | Silicon POwer Transistors |
| Manufacturer | SavantIC |
| Overview | ·With TO-220 package ·Complement to type 2SC2516/2516A ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·High-frequency power amplifier PINNING PIN 1 2 3 DESCRIPT. ied PARAMETER 2SA1069 IC=-3.0A ,IB=-0.3A;L=1mH 2SA1069A IC=-3A; IB=-0.3A IC=-3A; IB=-0.3A VCB=-60V; IE=0 CONDITIONS 2SA1069 2SA1069A SYMBOL MIN -60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V -80 -0.6 -1.5 V V VCEsat VBEsat Collector-emitter saturation voltage Base-emit. |
| Part Number | 2SA1069 |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Renesas |
| Overview |
DATA SHEET
SILICON POWER TRANSISTORS
2SA1069, 1069A
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1069/1069A are the mold power transistors developed for * Low collector saturation voltage 2SA1069-Z 2SA1069A-Z TO-220SMD (MP-25Z) * Fast switching speed (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base curre. |