| Part Number | 2SA1075 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2525 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . kdown Voltage IC=- 1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=- 50uA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current ICEO Collector Cutoff Current VCB= -120V; IE= 0 VCE= -120V; REB=∞ IEBO Emitter Cutoff Current VEB= -7V;. |
2SA1075 Datasheet
The 2SA1075 is a POWER TRANSISTOR.
| Part Number | 2SA1075 |
|---|---|
| Description | SILICON HIGH SPEED POWER TRANSISTOR |
| Manufacturer | Fujitsu Media Devices Limited |
| Overview | . . |
| Part Number | 2SA1075 |
|---|---|
| Description | (2SA1075 / 2SA1076) SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With MT-200 package ·Complement to type 2SC2525,2SC2526 ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulator. s otherwise specified PARAMETER Collector-emitter breakdown voltage 2SA1075 IC=-1mA ;RBE=< 2SA1076 2SA1075 IC=-50µA; IE=0 2SA1076 IE=-50µA; IC=0 IC=-5A;IB=-0.5A IC=-5A;VCE=-5V 2SA1075 ICBO Collector cut-off current 2SA1076 2SA1075 ICEO Collector cut-off current 2SA1076 IEBO hFE-1 hFE-2 Cob fT Emitte. |