2SA1193 Datasheet
2SA1193 Datasheet (Hitachi Semiconductor)
Hitachi Semiconductor
2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SA1193(K) Absolute Maximum Ratings (Ta = 25°C) Item Co.
mitter saturation voltage Turn on time Turn off time Note: 1. Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) t on t off
2
2SA1193(K)
Maximum Collector Dissipation Curve 0.9 Collector power dissipation PC (W) Collector current IC (A)
*3
*1.0 0.6
*0.3
*0.1
*0.03
*0.01
*0.003
*3 iC (peak) IC max Area o.
2SA1193 Datasheet (Renesas)
Renesas
2SA1193(K) Silicon PNP Epitaxial, Darlington REJ03G0641-0200 (Previous ADE-208-1013) Rev.2.00 Aug.10.2005 Application High gain amplifier Outline RENESAS Package code: PRSS0003DC-A (Package name: TO.
O hFE VCE(sat) VBE(sat) ton toff Min
*60
*
* 2000
*
*
*
* Typ
*
*
*
*
*
* 0.3 0.9 Max
*
*1.0
*1.0
*
*1.5
*2.0
*
* Unit V µA µA V V µs µs Test conditions IC =
*1 mA, RBE = ∞ VCB =
*60 V, IE = 0 VEB =
*7 V, IC = 0 VCE =
*3 V, IC =
*250 mA*1 IC =
*250 mA, IB =
*0.5 mA*1 IC =
*250 mA IB1 =
*IB2 =
*0.5 m.