2SA1242 Datasheet and Specifications PDF

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications 2SA1242 Unit: mm • Excellent hFE linearity : hFE (1) = 100 to 320 (V.

avy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum.

·hFE=100-320(IC= -0.5A; VCE= -2V) ·hFE=70(Min)(IC= -4A; VCE= -2V) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) ··High Power Dissipation- : PC= 10W@TC=25℃,PC= .

RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -2V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= .

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SA1242 TRANSISTOR (PNP) FEATURES z Strobe Flash Applications Medium Power Amplifier Applications z Excel.

z Strobe Flash Applications Medium Power Amplifier Applications z Excellent hFE Linearity : hFE (1) = 100 to 320 (VCE =
*2 V, IC =
*0.5 A) : hFE (2) = 70 (min) (VCE =
*2 V, IC =
*4 A) z Low Collector Saturation Voltage : VCE (sat) =
*1.0 V (max) (IC =
*4 A, IB =
*0.1 A) z High Power Dissipation : PC.

2SA1242(PNP) TO-251/TO-252-2L Transistor 1. BASE TO-251 2. COLLECTOR 3. EMITTER 1 23 Features Strobe Flash Applications Medium Power Amplifier Applications Excellent hFE linearity : hFE (1) = 10.

Strobe Flash Applications Medium Power Amplifier Applications Excellent hFE linearity : hFE (1) = 100 to 320 (VCE =
*2 V, IC =
*0.5 A) : hFE (2) = 70 (min) (VCE =
*2 V, IC =
*4 A) Low collector saturation voltage : VCE (sat) =
*1.0 V (max) (IC =
*4 A, IB =
*0.1 A) High power dissipation : PC = 10 W.