2SA1291 Datasheet and Specifications PDF

The 2SA1291 is a PNP/NPN Transistors.

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Max Operating Temp150 °C

2SA1291 Datasheet

2SA1291 Datasheet (SANYO)

SANYO

2SA1291 Datasheet Preview

Ordering number:ENN1201D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1291/2SC3255 60V/10A High-Speed Switching Applications Applications · Various inductance lamp drivers for electrical equipmen.


* Low saturation voltage.
* Excellent current dependence of hFE.
* Short switching time. ( ) : 2SA1291 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collecto.

2SA1291 Datasheet (SavantIC)

SavantIC

2SA1291 Datasheet Preview

·With TO-220 package ·Low collector saturation voltage. ·Short switching time. ·Complement to type 2SC3255 APPLICATIONS ·Various inductance lamp drivers for electrical equipment. ·Inverters, converter.

pecified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ,IE=0 IC=-1mA ,IB=0 IE=-1mA ,IC=0 IC=-.

2SA1291 Datasheet (Inchange Semiconductor)

Inchange Semiconductor

2SA1291 Datasheet Preview

·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@IC= -5A ·Fast Switching Speed ·Complement to Type 2SC3255 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.

stor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-E.

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