| Part Number | 2SA1307 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | :) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. 1Q.3MAX. FEATURES . Low Saturation Voltage : VCE ( sat )=-0.4V(Max,) at I C=-3A . High Speed Switching Time : t stg . . Low Saturation Voltage : VCE ( sat )=-0.4V(Max,) at I C=-3A . High Speed Switching Time : t stg =l .0As(Typ. . Complementary to 2SC3299 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING -60 UNIT 7.0 " 03. 2 ±0.2 4 Vt-ja s M -k J 01 -H x' to H 1 1.4 + 0. |
2SA1307 Datasheet and Specifications PDF
The 2SA1307 is a Silicon PNP Transistor.
Key Specifications
| Part Number | 2SA1307 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220Fa package ·Complement to type 2SC3299 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector . cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA , IB=0 IC=-3A; IB=-0.15A IC=-3A; IB=-0.15A VCB=-50V;IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-3A ; VCE=-1V IE=0; VCB=-10V,f=1MHz IC=-1A ; VCE=-4V 70 30 170 60 pF MHz MIN -50 -0.4 -1.2 -1.0 -1.0. |
| Part Number | 2SA1307 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@IC= -3A ·High Switching Speed ·Complement to Type 2SC3299 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. = 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -1V hFE-2 DC Current Gain I. |