| Part Number | 2SA1309A Datasheet |
|---|---|
| Manufacturer | Panasonic |
| Overview |
Transistor
2SA1309A
Silicon PNP epitaxial planer type
For low-frequency amplification Complementary to 2SC3311A
Unit: mm
4.0±0.2
3.0±0.2
s Features
q q q
Parameter Collector to base voltage Collect.
q q q
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings *60 *50 *7 *200 *100 300 150 *55 ~ +150 Uni. |
2SA1309A Datasheet and Specifications PDF
The 2SA1309A is a Silicon PNP Transistor.
Key Specifications
| Mount Type | Through Hole |
|---|
| Part Number | 2SA1309A Datasheet |
|---|---|
| Description | Plastic-Encapsulated Transistors |
| Manufacturer | TRANSYS |
| Overview | Transys Electronics L I M I T E D TO-92S Plastic-Encapsulated Transistors 2SA1309A FEATURES Power dissipation 1. EMITTER TRANSISTOR (PNP) TO-92S W (Tamb=25℃) 2. COLLECTOR 3. BASE PCM : 0.3 Colle. Power dissipation 1. EMITTER TRANSISTOR (PNP) TO-92S W (Tamb=25℃) 2. COLLECTOR 3. BASE PCM : 0.3 Collector current : -0.1 A ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter C. |