2SA1566 Datasheet and Specifications PDF

The 2SA1566 is a Silicon PNP Transistor.

Datasheet4U Logo
Part Number2SA1566 Datasheet
ManufacturerHitachi Semiconductor
Overview 2SA1566 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1566 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Co. tor to emitter saturation voltage Base to emitter voltage V(BR)EBO I CBO I EBO hFE* 250
*
* VCE(sat) VBE(sat) V V Notes: 1. The 2SA1566 is grouped by h FE as follows. 2. Pulse test Grade Mark hFE D JID 250 to 500 E JIE 400 to 800 2 2SA1566 Typical Output Characteristics Maximum Collector Dissi.
Part Number2SA1566 Datasheet
DescriptionTransistor
ManufacturerKexin Semiconductor
Overview SMD Type Silicon PNP Epitaxial 2SA1566 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 Low frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.. +0.1 2.4-0.1 Low frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector curren.
Part Number2SA1566 Datasheet
DescriptionSilicon PNP Transistor
ManufacturerRenesas
Overview 2SA1566 Silicon PNP Epitaxial REJ03G0642-0200 (Previous ADE-208-1021) Rev.2.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. 1. The 2SA1566 is grouped by hFE as follows. 2. Pulse test Grade D E Mark JID JIE hFE 250 to 500 400 to 800 Min
*120
*120
*5
*
* 250
*
* Typ
*
*
*
*
*
*
*
* Max
*
*
*
*0.1
*0.1 800
*0.15
*1.0 Unit V V V µA µA V V Test conditions IC =
*10 µA, IE = 0 IC =
*1 mA, RBE = ∞ IE =
*10 µA, IC = 0 VCB =
*70 V.