2SA562 Datasheet and Specifications PDF

The 2SA562 is a PNP Silicon Transistor.

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Max Operating Temp150 °C

2SA562 Datasheet

2SA562 Datasheet (SEMTECH)

SEMTECH

2SA562 Datasheet Preview

ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request.

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2SA562 Datasheet (SeCoS Halbleitertechnologie GmbH)

SeCoS Halbleitertechnologie GmbH

2SA562 Datasheet Preview

Elektronische Bauelemente 2SA562 -0.5A, -35V PNP Plastic Encapsulated Transistor FEATURES  Excellent hFE Linearity CLASSIFICATION OF hFE Product-Rank 2SA562-O Range 70~140 RoHS Compliant Produc.


* Excellent hFE Linearity CLASSIFICATION OF hFE Product-Rank 2SA562-O Range 70~140 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 2SA562-Y 120~240 TO-92 REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27.

2SA562 Datasheet (TRANSYS Electronics)

TRANSYS Electronics

2SA562 Datasheet Preview

Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA562 FEATURE Power dissipation PCM : 0.5 TRANSISTOR (PNP) TO-92 1. EMITTER W (Tamb=25℃) 2. COLLEC.

Power dissipation PCM : 0.5 TRANSISTOR (PNP) TO-92 1. EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current A ICM : -0.5 Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: TJ : -55℃ to +150℃ 150℃ 3. BASE 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ P.

2SA562 Datasheet (Jiangsu Changjiang Electronics Technology)

Jiangsu Changjiang Electronics Technology

2SA562 Datasheet Preview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA562 FEATURE Power dissipation PCM : 0.5 TRANSISTOR (PNP) TO-92 1. EMITTER W (Tamb.

Power dissipation PCM : 0.5 TRANSISTOR (PNP) TO-92 1. EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current A ICM : -0.5 Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: TJ : -55℃ to +150℃ 150℃ 3. BASE 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ .

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