2SA649 Datasheet
2SA649 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f.
Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC.
2SA649 Datasheet (SavantIC)
SavantIC
·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For low frequency and large power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and sym.
breakdown voltage IC=-25mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-150V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-5V IC=-1A ; VCE=-5V -150 V Collector-base breakdown voltage -150 V Emitter-base breakdown voltage -6 V Collector-emitter saturation voltage -2.0 V .