2SA650 Datasheet and Specifications PDF

The 2SA650 is a PNP Transistor.

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Part Number2SA650 Datasheet
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f. = -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -2A; VCE= -5V COB Collector Out.
Part Number2SA650 Datasheet
DescriptionSilicon POwer Transistors
ManufacturerSavantIC
Overview ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) a. B=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-150V; IE=0 VEB=-6V; IC=0 IC=-2A ; VCE=-5V IE=0; VCB=-10V;f=1MHz IC=-1A ; VCE=-5V -150 V Collector-base breakdown voltage -150 V Emitter-base breakdown voltage -6 V Collector-emitter saturation voltage -2.0 V Base-emit.