2SAR572D Datasheet and Specifications PDF

The 2SAR572D is a Silicon PNP Power Transistor.

Key Specifications

Mount TypeSurface Mount
Max Operating Temp150 °C
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Part Number2SAR572D Datasheet
ManufacturerInchange Semiconductor
Overview ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)≤-0.4V@(IC=-2A,IB=-0.1A) ·Complementary NPN types:2SCR572D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance . ector-Emitter breakdown voltage IC=-1mA -30 V BVEBO Emitter-Base breakdown voltage IE=-100uA -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -100mA ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.4 V -1.0 μA -1.0 μA hFE DC.
Part Number2SAR572D Datasheet
DescriptionPNP -5.0A -30V Middle Power Transistor
ManufacturerROHM
Overview 2SAR572D PNP -5.0A -30V Middle Power Transistor Parameter VCEO IC Value -30V -5A lFeatures 1) Suitable for Middle Power Driver. 2) Complementary NPN Types : 2SCR572D. 3) Low VCE(sat) 　　VCE(sat)=-0.. 1) Suitable for Middle Power Driver. 2) Complementary NPN Types : 2SCR572D. 3) Low VCE(sat) 　　VCE(sat)=-0.40V(Max.). 　　(IC/IB=-2A/-100mA) 4) Lead Free/Rohs Compliant lOutline CPT 　 　 2SAR572D 　 　 　 　 　　　　　　　　 lInner circuit Datasheet 　 　 B: BASE C: COLLECTOR E: EMITTER lApplication Motor dr.

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