| Part Number | 2SB1001 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SB1001
Silicon PNP Epitaxial
Application
• Low frequency power amplifier • Complementary pair with 2SD1367
Outline
UPAK
1 3 2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
2SB1001
Abs.
ce Note: Mark hFE Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE*
1
Min *20 *16 *6 * * 100 * * * * Typ * * * * * * *0.15 *1.0 150 50 Max * * * *0.1 *0.1 320 *0.3 *1.2 * * Unit V V V µA µA Test conditions I C = *10 µA, IE = 0 I C = *1 mA, RBE = ∞ I E = *10 µA, IC = 0 VCB = *16 V, IE = 0 VEB =. |
2SB1001 Datasheet and Specifications PDF
The 2SB1001 is a Silicon PNP Epitaxial Transistor.
| Part Number | 2SB1001 Datasheet |
|---|---|
| Description | Silicon PNP Transistor |
| Manufacturer | Renesas |
| Overview | 2SB1001 Silicon PNP Epitaxial REJ03G0659-0200 (Previous ADE-208-1034) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD1367 Outline RENESAS Package code:. tage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE. |
| Part Number | 2SB1001 Datasheet |
|---|---|
| Description | Silicon PNP Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon PNP Epitaxial 2SB1001 Transistors Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter t. Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature *1. PW 10 ms; d 0.02. Symbol VCBO VCE. |