| Part Number | 2SB1134 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:2091B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1134/2SD1667
50V/5A Switching Applications
Applications
· Relay drivers, high-speed inverters, and other general high-current sw.
* Low-saturation collector-to-emitter voltage : VCE(sat)= *0.4V max/IC=( *)3A, IB=( *)0.3A. * Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1134/2SD1667] ( ) : 2SB1134 1 : Base 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter . |
2SB1134 Datasheet and Specifications PDF
The 2SB1134 is a PNP Transistor.
| Part Number | 2SB1134 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220F package ·Complement to type 2SD1667 ·Low collector saturation voltage APPLICATIONS ·Relay drivers,high-speed inverters and other general high-current switching applications PINNING PIN 1. ltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ;RBE=: IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A; IB=-0.3A VCB=-40V ;IE=0 VEB=-4V; IC=0 IC=-. |
| Part Number | 2SB1134 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@ IC= -3A ·Complement to Type 2SD1667 ·Minimum Lot-to-Lot variations for robust de. L PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A ICBO Collector Cutoff Curr. |