| Part Number | 2SB1135 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:2094B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1135/2SD1668
50V/7A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and other general hig.
* Low-saturation collector-to-emitter voltage : VCE(sat)= *0.4V max. * Wide ASO leading to high resistance to breakdown. * Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1135/2SD1668] ( ) : 2SB1135 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colle. |
2SB1135 Datasheet and Specifications PDF
The 2SB1135 is a PNP Transistor.
| Part Number | 2SB1135 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220F package ·Complement to type 2SD1668 ·Low collector saturation voltage ·Wide ASO APPLICATIONS ·Relay drivers ·High speed inverters;converters ·General high current switching application P. voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=< IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-4A; IB=-0.4A VCB=-40V ;IE=0 V. |
| Part Number | 2SB1135 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@ IC= -4A ·Complement to Type 2SD1668 ·Minimum Lot-to-Lot variations for robust de. OL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A ICBO Collector Cutoff Cur. |