2SB1226 Datasheet and Specifications PDF

The 2SB1226 is a Epitaxial Planar Silicon Transistor.

Key Specifications

Max Operating Temp150 °C
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Part Number2SB1226 Datasheet
ManufacturerSANYO
Overview Ordering number:EN2212B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1226/2SD1828 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regul.
* High DC current gain.
* Large current capcity and wide ASO.
* Micaless pakcage facilitating mounting. ( ) : 2SB1226 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-t.
Part Number2SB1226 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -1.5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SD1828 ·Minimum Lot-to-Lot variations for robust device performance and reli. PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -3mA VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -3mA ICBO Collector Cutoff .
Part Number2SB1226 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220F package ·Complement to type 2SD1828 ·High DC current gain. ·Large current capacity and wide ASO. ·DARLINGTON APPLICATIONS ·Motor drivers,printer hammer drivers,relay drivers,voltage regu. ector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-5mA; IE=0 IC=-50mA; RBE== IC=-1.5A ; IB=-3mA IC=-1.5A ; IB=-3mA VCB=-80V;IE=0 VEB=-5V;IC=0 IC=-1..

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