2SB1228 Datasheet and Specifications PDF

The 2SB1228 is a Epitaxial Planar Silicon Transistor.

Key Specifications

Pins3
Max Operating Temp150 °C
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Part Number2SB1228 Datasheet
ManufacturerSANYO
Overview Ordering number:EN2214B PNP/NPN Epitaxial Planar Silicon Darlington Transistor 2SB1228/2SD1830 Driver Applications Applications · Suitable for use in control of motor drivers, printer hammer drivers.
* High DC current gain.
* Large current capacity and wide ASO.
* Low saturation voltage.
* Micaless package facilitating mounting. ( ) : 2SB1228 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t.
Part Number2SB1228 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220F package ·Complement to type 2SD1830 ·High DC current gain. ·Large current capacity and wide ASO. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·Suitable for use in control of motor d. erwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-5mA; IE=0 IC=-50mA; RBE=> IC=-4A .
Part Number2SB1228 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -4A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SD1830 ·Minimum Lot-to-Lot variations for robust device performance and reliab. PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -8mA VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -8mA ICBO Collector Cutoff Curr.

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Similar Datasheets

Part Number Manufacturer Description
B1228 SANYO 2SB1228