2SB1274 Datasheet and Specifications PDF

Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications • Package Dimensions unit : mm.

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* 10.0 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting. 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( ):2SB1274 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-.

·With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·G.

akdown voltage Collector-emitter breakdown voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-1mA; IE=0 IC=-5mA; RBE=.

PNP Epitaxial Planar Silicon Transistors FEATURES  Good Linearity of hfe.  Complementary to KTD2060 Pb Lead-free Production specification 2SB1274 TO-220AB MAXIMUM RATING operating temperature r.

* Good Linearity of hfe.
* Complementary to KTD2060 Pb Lead-free Production specification 2SB1274 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emit.

1. BASE 2. COLLECTOR Features 3 2 1 3. EMITTER — Wide ASO (Adoption of MBIT process). — Low saturation voltage. — High reliability. — High breakdown voltage. 2SB1274(PNP) TO-220 Transistor TO-22.

3 2 1 3. EMITTER — Wide ASO (Adoption of MBIT process). — Low saturation voltage. — High reliability. — High breakdown voltage. 2SB1274(PNP) TO-220 Transistor TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector.