| Part Number | 2SB1407S Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SB1407(L)/(S)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary Pair with 2SD2121(L)/(S)
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Col.
ollector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage VBE VCE(sat)
60 20 * * V V Notes: 1. The 2SB1407(L)/(S) is grouped by h FE1. |
2SB1407S Datasheet and Specifications PDF
The 2SB1407S is a Silicon PNP Epitaxial Transistor.
| Part Number | 2SB1407S Datasheet |
|---|---|
| Description | Silicon PNP Epitaxial Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon PNP Epitaxial 2SB1407S TO-252 Transistors Features Low frequency power amplifier. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.7. Low frequency power amplifier. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter . |