2SB1560 Datasheet PDF

The 2SB1560 is a Silicon PNP Transistor.

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Part Number2SB1560 Datasheet
ManufacturerSanken
Overview Darlington 2SB1560 (70Ω) E B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Application : Audio, Series Regulator and General Purpose sAbsolute maximum r. 4.0max 19.9±0.3 4.0 2.0 1.8 5.0±0.2 15.6±0.4 9.6 4.8±0.2 2.0±0.1 a ø3.2±0.1 b 2 3 1.05 +-00..12 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 BCE 1.4 Weight : Approx 6.0g a. Part No. b. Lot No. DC Current Gain hFE Collector Current IC(A)
*10mA I C
* V CE Characteristics (Typical)
*10
*2 .5 mA.
Part Number2SB1560 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PN package ·Complement to type 2SD2390 APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN. r cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-7A ;IB=-7mA IC=-7A ;IB=-7mA VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-7A ; VCE=-4V IE=0 ; VCB=10V;f=1MHz IC=-2A ; VCE=-12V 5000 MIN -150 2SB1560 SYMBOL V(BR)CEO VCEsat VBEsat ICB.
Part Number2SB1560 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2390 ·Minimum Lot-to-Lot variations for robust device performa. tor-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -7mA VBE(sat) Base-Emitter Saturation Voltage IC= -7A; IB= -7mA ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -7.