| Part Number | 2SB1570 Datasheet |
|---|---|
| Manufacturer | Sanken |
| Overview |
(7 0 Ω ) E
Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1570 –160 –150 –5 –12 –1 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2SB1570
sElectrical C.
(mA) *7 IB2 (mA) 7 ton (µs) 0.8typ tstg (µs) 3.0typ tf (µs) 1.2typ Weight : Approx 18.4g a. Type No. b. Lot No. I C * V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) *12 V CE ( sat ) * I B Characteristics (Typical) *3 I C * V BE Temperature Characteristics . |
2SB1570 Datasheet and Specifications PDF
The 2SB1570 is a Silicon PNP Transistor.
Key Specifications
| Mount Type | Through Hole |
|---|---|
| Pins | 3 |
| Part Number | 2SB1570 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2401 ·Minimum Lot-to-Lot variations for robust d. (BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -7mA VBE(sat) Base-Emitter Saturation Voltage IC= -7A; IB= -7mA ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Curren. |