2SB566 Datasheet
2SB566 Datasheet (Hitachi Semiconductor)
Hitachi Semiconductor
2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1 2 3 1. Base 2. Coll.
Typ
*
*
*
*
*
*
*
* 15 0.3 3.0 2.5 Max
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*
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*1 200
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*1.0
*1.2
*
*
*
* V V MHz µs µs µs Unit V V V µA Test conditions I C =
*10 µA, IE = 0 I C =
*50 mA, RBE = ∞ I E =
*10 µA, IC = 0 VCB =
*50 V, IE = 0 VCE =
*4 V, IC =
*1 A VCE =
*4 V, IC =
*0.1 A I C =
*2 A, IB =
*0.2 A I C =
*2 A, IB =
*0.2 A VC.
2SB566 Datasheet (SavantIC)
SavantIC
·With TO-220C package ·Complement to type 2SD476/476A APPLICATIONS ·For low frequency power amplifier power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting.
-10µA; IC=0 IC=-2 A;IB=-0.2 A IC=-2 A;IB=-0.2 A VCB=-50V; IE=0 IC=-0.1A ; VCE=-4V IC=-1A ; VCE=-4V IC=-0.5A ; VCE=-4V CONDITIONS IC=-10µA ; IE=0 SYMBOL V(BR)CBO 2SB566 2SB566A MIN -70 -50 TYP. MAX UNIT V V(BR)CEO Collector-emitter breakdown voltage V -60 -5 -1.0 -1.2 -1 35 60 15 200 MHz V V .
2SB566 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Low Collector Saturation Voltage :VCE(sat)= -1.0(V)(Max)@IC= -2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Complement to Type 2SD476 ·Minimum Lot-to-Lot variations for robust devic.
ge IC= -30mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current.