| Part Number | 2SB727 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SB727(K)
Silicon PNP Epitaxial
Application
Medium speed and power switching complementary pair with 2SD768(K)
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
1 kΩ (Typ)
40.
= *6 A, IB = *60 mA*1 I C = *3 A, IB1 = *IB2 = *6 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn . |
2SB727 Datasheet and Specifications PDF
The 2SB727 is a Silicon PNP Transistor.
| Part Number | 2SB727 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement . AMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA, IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A, IB= -6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A, IB= -60mA VBE(sat)-1 Base-Emitte. |