2SB855 Datasheet

The 2SB855 is a Silicon PNP Power Transistor.

Datasheet4U Logo
Part Number2SB855
ManufacturerInchange Semiconductor
Overview ·Collector Current: IC= -2A ·Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable. V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V ICBO Collector Cutoff Current VCB= -20V; IE= 0 hFE-1 DC Current Gain IC= -1A; VCE= -4V hFE-2 DC Current Gain IC= -.
Part Number2SB855
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220C package ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ra. urrent gain Transition frequency CONDITIONS IC=-50mA; RBE=6 IC=-5mA; IE=0 IE=-5mA; IC=0 IC=-2 A;IB=-0.2 A IC=-1A ; VCE=-4V VCB=-20V; IE=0 IC=-1A ; VCE=-4V IC=-0.1A ; VCE=-4V IC=-0.5A ; VCE=-4V 35 35 35 MIN -50 -50 -4 TYP. 2SB855 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT MAX.