| Part Number | 2SC1080 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·With TO-3 Package ·High power dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For audio power amplifier applicati.
ge IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
hFE-1
DC Current Gain
IC= 2.0A; VCE= 5V
hFE-2
DC Current Gain
IC= 7.0A; VCE= 5V
fT
Current-Gain *Bandwidth Product IC= 2A ; VCE= 5V MIN TYP. MAX UNIT 3.0 V 2.5 V 110 V 5 V 40 140 15 4 MHz * hFE-1 Classi. |
2SC1080 Datasheet and Specifications PDF
The 2SC1080 is a NPN Transistor.
| Part Number | 2SC1080 Datasheet |
|---|---|
| Description | (2SC1079 / 2SC1080) SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·Complement to type 2SA679/680 ·High power dissipation APPLICATIONS ·For audio power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outl. BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IE=10mA ;IC=0 IC=10A; IB=1A IC=10A ; VCE=5V VCB=50V; IE=0 VEB=. |