2SC1116 Datasheet and Specifications PDF

The 2SC1116 is a NPN Transistor.

2SC1116 Datasheet

2SC1116 Datasheet (Inchange Semiconductor)

Inchange Semiconductor

2SC1116 Datasheet Preview

·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For power amplif.

Emitter Breakdown Voltage IC= 25mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 hFE DC Current Gain IC=3.0A; VCE= 4V fT Current-Gain
*Bandwidth Product IC= 1.0A; VCE= 12V; ftest= 1MHz MIN TYP. MAX UNIT 1.5 V 2.0 V 120 V 6 V 50 10 MHz NOTICE: ISC reserves the right.

2SC1116 Datasheet (SavantIC)

SavantIC

2SC1116 Datasheet Preview

·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol .

=1mA ;IE=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V ICBO Collector cut-off current VCB=180V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=4V.

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