| Part Number | 2SC2462 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SC2462
Silicon NPN Epitaxial
Application
Low frequency amplifier
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC2462
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Co.
oltage Note: Grade Mark hFE B LB 100 to 200 C LC 160 to 320 V(BR)EBO I CBO I EBO hFE*
100 * * D LD VCE(sat) VBE V V I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA 1. The 2SC2462 is grouped by h FE as follows. 250 to 500 See characteristic curves of 2SC458 (LG). 2 2SC2462 Maximum Collector Dis. |
2SC2462 Datasheet and Specifications PDF
The 2SC2462 is a Silicon NPN Transistor.
Key Specifications
| Part Number | 2SC2462 Datasheet |
|---|---|
| Description | Silicon NPN Epitaxial Transistor |
| Manufacturer | Renesas |
| Overview |
2SC2462
Silicon NPN Epitaxial
REJ03G0697-0200 (Previous ADE-208-1063) Rev.2.00 Aug.10.2005
Application
Low frequency amplifier
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2
1.
tage VBE Note: 1. The 2SC2462 is grouped by hFE as follows. Grade B C D Mark LB LC LD hFE 100 to 200 160 to 320 250 to 500 Min 50 40 5 * * 100 * * Typ * * * * * * * * Max * * * 0.5 0.5 500 0.2 0.75 Unit V V V µA µA V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 30. |
| Part Number | 2SC2462 Datasheet |
|---|---|
| Description | Silicon NPN Epitaxial Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon NPN Epitaxial 2SC2462 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 . +0.1 2.4-0.1 Low frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collect. |