| Part Number | 2SC2611 Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For high voltage amplifier TV video output applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ABSO. tion frequency Collector output capacitance CONDITIONS IC=1mA;RBE=6 IC=10µA; IE=0 IE=10µA; IC=0 IC=20mA; IB=2mA VCE=250V; RBE=6 IC=20mA ; VCE=20V IC=20mA ; VCE=20V IE=0 ; VCB=20V;f=1MHz 30 50 MIN 300 300 5 2SC2611 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) ICEO hFE fT COB TYP. MAX UNIT V V V 1. |
2SC2611 Datasheet and Specifications PDF
The 2SC2611 is a SILICON POWER TRANSISTOR.
Key Specifications
| Max Operating Temp | 140 °C |
|---|
| Part Number | 2SC2611 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Hitachi Semiconductor |
| Overview | 2SC2611 Silicon NPN Triple Diffused Application High voltage amplifier TV VIDEO output Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collect. or to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob Maximum Collector Dissipation Curve 1.5 Collector power dissipation Pc (W) 1.0 Collector Current IC (mA) Typical Output Characteristics 16 14 12 10 8 0.4 6 4 0.2 2 µA IB = 0 0.8. |
| Part Number | 2SC2611 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APP.
down Voltage IC= 1mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10μA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA
ICEO
Collector Cutoff Current
VCE= 250V; RBE= ∞
hFE
DC Current Gain
IC= 20mA ; VCE= 20V
fT
Current-Gain *Bandwidth Product IC= 20mA ; VCE= . |
| Part Number | 2SC2611 Datasheet |
|---|---|
| Description | NPN Power Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
Transistors
NPN Power Transistor
■ Features
● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A
C2611
SOT-89
4.50+0.1 -0.1
1.80+0.1 -0.1
123
0.48+0.1 -0.1
0.53+0.1.
* Collector-emitter Voltage: V(BR)CEO=400V * Collector Current: IC=0.2A C2611 SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 123 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.1 2.50 -0.1 +0.1 4.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.1 0.80 -0.1 +0.1 2.60 -0.1 +0.1 0.40 -0.1 3.00+0.1 -0.1 1. Base 2. Collect. |