| Part Number | 2SC2877 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | 2SC2877 SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES . Suitable for output stage of 5 watts car radio and car stereo. . Good linearity. . Suitable for output stage of 5 watts car radio and car stereo. . Good linearity of hpg. . Complementary to 2SA1217. Unit in mm 7.9 MAX. 03.1+0.15 ^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Col. |
2SC2877 Datasheet and Specifications PDF
The 2SC2877 is a Silicon NPN Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SC2877 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stere. voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=2.0A; IB=0.2A IC=0.5A ; VCE=2V VCB=40V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=2.5A ; VCE=2V IC=0.5A ; VCE=2V 80 25 MIN 40 2SC2877 SYMBOL V(BR)CEO VCE(sat) VBE. |
| Part Number | 2SC2877 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 40V (Min) ·Good Linearity of hFE ·Complement to Type 2SA1217 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA. mitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 2V ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 2V hFE-. |