| Part Number | 2SC2982 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications 2SC2982 Unit: mm • High DC current gain and excellent linearity : h. bstrate (250 mm2 × 0.8 t) JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 1 2004-07-07 2SC2982 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage . |
2SC2982 Datasheet and Specifications PDF
The 2SC2982 is a Silicon NPN Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SC2982 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Medium Power Amplifier Applications 2SC2982 Transistors Features Low Saturation Voltage : VCE(sat) = 0.5V (max) (IC = 2A, IB = 50mA) Small Flat Package Complementary to 2SA1314 Absolute Ma. Low Saturation Voltage : VCE(sat) = 0.5V (max) (IC = 2A, IB = 50mA) Small Flat Package Complementary to 2SA1314 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulsed) *1 Base Current (DC) Bas. |