| Part Number | 2SC3182 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | : SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SA1265 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage Unit in mm J.5.9MAX. 03.. . Complementary to 2SA1265 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage Unit in mm J.5.9MAX. 03.8±O.3 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipatio. |
2SC3182 Datasheet and Specifications PDF
The 2SC3182 is a Silicon NPN Transistor.
| Part Number | 2SC3182 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3P(I) package ·Complement to type 2SA1265 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;c. Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IC=7A; IB=0.7A IC=5A ; VCE=5V VCB=140V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=5V IE=0 ; VCB=10V ;f=1MHz 55 35 . |
| Part Number | 2SC3182 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.) @IC= 7A ·Good Linearity of hFE ·Complement to Type 2SA1265 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 140 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A 2.0 V VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 140V; IE= 0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 . |