| Part Number | 2SC3281 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview |
TOSHIBA
Discrete Semiconductors
Transistor
Silicon NPN Triple Diffused Type
Power Amplifier Applications
Features • Complementary to 2SA1302 • Recommended for 100W High Fidelity Audio Frequency
Amp.
* Complementary to 2SA1302 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector PowerDissipa. |
2SC3281 Datasheet and Specifications PDF
The 2SC3281 is a Silicon NPN Triple Diffused Type Transistor.
| Part Number | 2SC3281 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 3.0V(Max)@ IC= 10A, IB= 1A ·High Power Dissipation ·Minimum Lot-to-Lot variations for rob. R CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VBE(on) Base-Emitter On Voltage IC= 8A ; VCE= 5V ICBO Collector Cutoff Current VCB= 200V ; IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Cur. |
| Part Number | 2SC3281 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PL package ·Complement to type 2SA1302 APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Ba. n voltage IC=8A ;IB=0.8A VBE ICBO IEBO hFE-1 Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain IC=8A ; VCE=5V VCB=200V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V hFE-2 DC current gain IC=8A ; VCE=5V fT Transition frequency COB Collector output capacitance IC=1A. |