The 2SC3297 is a NPN Transistor.
| Max Operating Temp | 150 °C |
|---|
Inchange Semiconductor
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1305 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA.
E(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 2V ICBO Collector Cutoff Current VCB= 20V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 2V hFE-2 DC Current Gain IC= 2.5A; VCE= 2V fT C.
SavantIC
·With TO-220Fa package ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratin.
nt DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=1mA , IE=0 IE=1mA , IC=0 IC=2A ;IB=0.2A IC=0.5A ; VCE=5V VCB=30V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=3A ; VCE=5V IC=0.5A ; VCE=5V 70 20 MIN 30 30 5 2SC3297 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO.
Toshiba
:. SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES . Good Linearity of fpg . Complementary to 2SA1305 and 5.
. Good Linearity of fpg . Complementary to 2SA1305 and 5W Output Applications 10.3 MAX Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperatur.
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