| Part Number | 2SC3637 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:EN1615C
NPN Triple Diffused Planar Silicon Transistor
2SC3637
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High reliability (Adoption of HVP .
* High reliability (Adoption of HVP process). * Fast speed. * High breakdown voltage. * Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3637] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volta. |
2SC3637 Datasheet and Specifications PDF
The 2SC3637 is a NPN Triple Diffused Planar Silicon Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SC3637 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PN package ·High voltage ,high speed ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to . Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA ; IB=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VCE=900V; RBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V 8 MIN 500 2SC3637 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICES IEB. |
| Part Number | 2SC3637 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistors |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio. B = 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 500V; IE= 0 ICES Collector Cutoff Current VCE= 900V; RBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= . |