2SC3868 Datasheet and Specifications PDF

The 2SC3868 is a Silicon NPN Transistor.

Key Specifications

Height0 m
Length0 m
Width0 m
Max Operating Temp150 °C
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Part Number2SC3868 Datasheet
ManufacturerPanasonic
Overview Power Transistors 2SC3868 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s F. q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 500 500 400 7 3 1.5 0.5 25 2 150
*55 to +150 Unit V V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 1..
Part Number2SC3868 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220Fa package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum r. -off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=1A ;IB=0.2A IC=1A ;IB=0.2A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V 15 8 30 MHz MIN 400 1.0 1.5 100 100 TYP. MAX UNIT V V V µA µA SYMBOL VCEO(SU.
Part Number2SC3868 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performa. herwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 1.5 V ICBO Collector.

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