The 2SC3871 is a Power Transistor.
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SC3871 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performa. wise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V ICBO Collector Cutoff Curre. |
| Part Number | 2SC3871 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Panasonic |
| Overview | Power Transistors 2SC3871 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 0.7±0.1 10.0±0.2 4.2±0.2 s Features 5.5±0.2 2.7±0.2 4.2±0.2 16.7±0. 5.5±0.2 2.7±0.2 4.2±0.2 16.7±0.3 7.5±0.2 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with / one screw φ3.1±0.1 1.3±0.2 1.4±0.1 e s Absolute Maximum Ratings (TC=25˚C) c type) Para. |
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