2SC4130 Datasheet and Specifications PDF

The 2SC4130 is a Silicon NPN Transistor.

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Part Number2SC4130 Datasheet
ManufacturerSanken
Overview 2SC4130 Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4130 500 400 10 7(Pulse. (Typical) 7 V CE (sat),V BE (sat)
* I C Temperature Characteristics (Typical) (I C /I B =5) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (sa t) (V ) I C
* V BE Temperature Characteristics (Typical) 7 (V C E =4V) IB =1 6 40 0m 10 00 m A A 60 0.
Part Number2SC4130 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-. ent Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=500V; IE=0 VEB=10V; IC=0 IC=3A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.5A ; VCE=12V 10 MIN 400 2SC4130 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT TYP.
Part Number2SC4130 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switchi. Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain.