2SC4139 Datasheet and Specifications PDF

The 2SC4139 is a Silicon NPN Transistor.

Key Specifications

Max Operating Temp150 °C
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Part Number2SC4139 Datasheet
ManufacturerSanken
Overview 2SC4139 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4139 500 400 10 1. 6.0g a. Type No. b. Lot No. I C
* V CE Characteristics (Typical) 15 1. 5A V CE (sat),V BE (sat)
* I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) (I C /I B =5) 1.5 I C
* V BE Temperature Character.
Part Number2SC4139 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.. ltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ; IB=0 IC=8A; IB=1.6A IC=8A; IB=1.6A VCB=500V ;IE=0 VEB=10V; IC=0 IC=8A ; VCE=4V IE=-1.5A ; VCE=12V f=1MHz ; VCB=10V 10 10 85 M.
Part Number2SC4139 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION. mitter Breakdown Voltage IC= 25mA ; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A 1.3 V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 0.1.

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