2SC4140 Datasheet and Specifications PDF

The 2SC4140 is a Silicon NPN Transistor.

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Part Number2SC4140 Datasheet
ManufacturerSanken
Overview 2SC4140 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4140 500 400 10 1. 0g a. Type No. b. Lot No. I C
* V CE Characteristics (Typical) 18 16 V CE (sat),V BE (sat)
* I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) 1.4 I C
* V BE Temperature Characteristics .
Part Number2SC4140 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO. IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2A ICBO Collector Cutoff Current VCB= 500V ; IE= 0 IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE DC Current Gain IC= 10A ; VCE= 4V COB Output Capacitance IE= 0 .
Part Number2SC4140 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.. voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ; IB=0 IC=10A; IB=2A IC=10A; IB=2A VCB=500V ;IE=0 VEB=10V; IC=0 IC=10A ; VCE=4V IE=-2A ; VCE=12V f=1MHz ; VCB=10V 10 10 165 M.