| Part Number | 2SC4160 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:ENN2481C
NPN Triple Diffused Planar Silicon Transistor
2SC4160
400V/4A Switching Regulator Applications
Features
· High breakdown voltage. · High reliability. · Fast switching speed .
* High breakdown voltage. * High reliability. * Fast switching speed (tf=0.1µs typ). * Wide ASO. * Adoption of MBIT process. * Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4160] 10.0 3.2 3.5 7.2 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2. |
2SC4160 Datasheet and Specifications PDF
The 2SC4160 is a NPN Triple Diffused Planar Silicon Transistor.
| Part Number | 2SC4160 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220F package ·High breakdown voltage. ·High reliability. ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/4A switching regulator applications PINNING PIN 1 2 3 Base Colle. voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ; RBE=; IC=1mA ; IE=0 IE=1mA ; IC=0 . |
| Part Number | 2SC4160 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and r. ess otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VB. |