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2SC4300 Datasheet

The 2SC4300 is a NPN Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SC4300
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design. mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 2A; VCE= 4V COB Output Capacitance IE= 0.
Part Number2SC4300
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and . ation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; IB=0 IC=2A;IB=0.4A IC=2A;IB=0.4A VCB=800V; IE=0 VEB=7V; IC=0 IC=2A ; VCE=4V IE=-0.5A ; VCE=12V VCB=10V;f=1MHz 10 6 75 MIN 800 0.5 1.2 100 100 30 MHz pF TYP. MAX.
Part Number2SC4300
DescriptionSilicon NPN Transistor
ManufacturerSanken
Overview 2SC4300 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4300 900 800 7 5(Pulse10) 2.5 75. prox 6.5g a. Type No. b. Lot No. I C
  – V CE Characteristics (Typical) 5 V CE (sat),V BE (sat)
  – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) I C
  – V BE Temperature Characteristics (T.

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