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2SC4301 Datasheet

The 2SC4301 is a NPN Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SC4301
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO. Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 3.
Part Number2SC4301
DescriptionSilicon NPN Transistor
ManufacturerSanken
Overview 2SC4301 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose sAbsolute maximum ratings (Ta=25°C) S. E Weight : Approx 6.5g a. Type No. b. Lot No. I C
  – V CE Characteristics (Typical) 1A 700m A V CE (sat),V BE (sat)
  – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) (I C /I B =5) I C
  – V BE Temper.
Part Number2SC4301
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·Switching Regulator, ·Lighting Inverter and general purpose PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) a. turation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; IB=0 IC=3A;IB=0.6A IC=3A;IB=0.6A VCB=800V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=4V IE=-1A ; VCE=12V VCB=10V;f=1MHz 10 6 105 MIN 800 0.5 1.2 100 100 30 MHz pF TYP. M.