2SC4386 Datasheet and Specifications PDF

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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1671 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and r.

r Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 4V fT Current-Gain
*Bandwidth Product IE= -0.5A; VCE= 12V Switchi.

·With TO-3PML package ·Complement to type 2SA1671 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute m.

nsition frequency CONDITIONS IC=50mA; IB=0 IE=1mA; IC=0 IC=3 A;IB=0.3 A VCB=160V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=-0.5A ; VCE=12V 50 MIN 120 6 2SC4386 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 1.5 10 10 180 20 V µA µA MHz hFE classifications O 50-100 P 70-140 Y .