2SC4550 Datasheet and Specifications PDF

The 2SC4550 is a Silicon Transistor.

Key Specifications

Mount TypeThrough Hole
Pins3
Length10 mm
Width15 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part Number2SC4550 Datasheet
ManufacturerComset Semiconductors
Overview NPN 2SC4550 SILCON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal . low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of cost. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symb.
Part Number2SC4550 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·Suited for use in drivers such as DC-DC converters and actuators PINNING PIN 1 2 3 Base Collector Emitter Fi. voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=4A; IB=0.4A,L.
Part Number2SC4550 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerRenesas
Overview DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed switching and features low VCE(sat) an. low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES
* High hFE and low VCE(sat): hFE ≥ 100 (VCE = 2 V, I.
Part Number2SC4550 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V , IC= 1.5A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 4A, IB= 0.2A) ·Minimum Lo. 5℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA,Ib=0 VCE(sat)-1 VCE(sat)-2 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A IC= 6A; IB= 0.3A VBE(sat)-1 VBE(sat)-2 Base-Emitter Saturati.

Price & Availability

Seller Inventory Price Breaks Buy
Component Stockers USA 413 1+ : 99.99 USD View Offer
Win Source 4249 70+ : 0.8759 USD
165+ : 0.7186 USD
250+ : 0.6962 USD
345+ : 0.6738 USD
View Offer
SHENGYU ELECTRONICS 6698 1+ : 0.4288 USD
10+ : 0.4202 USD
100+ : 0.41 USD
1000+ : 0.39 USD
View Offer