2SC4557 Datasheet and Specifications PDF

The 2SC4557 is a NPN TRANSISTOR.

Key Specifications

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Part Number2SC4557 Datasheet
ManufacturerSanken
Overview 2SC4557 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4557 900 550 7 10(Pulse20) 5 80(. x 2.0g a. Type No. b. Lot No. I C
* V CE Characteristics (Typical) 10 1.2 A V CE (sat),V BE (sat)
* I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) (I C /I B =5) 2 I C
* V BE Temperature Characteri.
Part Number2SC4557 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P. tion voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; RBE=8 IC=5A;IB=1A IC=5A;IB=1A VCB=800V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=4V IE=-1A ; VCE=12V VCB=10V;f=1MHz 10 6 105 MIN 550 0.5 1.2 100 100 28 MHz pF TYP. MAX UNIT.
Part Number2SC4557 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 550V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance . nductor 2SC4557 CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 550 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.2 V ICBO Collector Cutoff Current VCB= 800V; IE=.

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