2SC4883 Datasheet and Specifications PDF

2SC4883/4883A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A) sAbsolute maximum ratings (Ta=25°C) Symbol 2SC4883 2SC4883A VCBO VCEO VEBO IC IB PC Tj Tstg 150 150 6 2 1 20(Tc=25°.

pical) 2 V CE ( sat )
* I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) 3 I C
* V BE Temperature Characteristics (Typical) 2 (V CE =4V) 100mA 60mA 30m A 15m A Collector Current I C (A) 10m A 2 Collector Current I C (A) 1 1 ) Temp)
*55˚C (Case eT Ca.

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Complement to Type 2SA1859 ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·F.

) Collector-Emitter Saturation Voltage IC= 0.7A; IB= 70mA ICBO Collector Cutoff Current VCB= 150V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 0.7A; VCE= 10V fT Current-Gain
*Bandwidth Product IE= -0.7A; VCE= 12V COB Output Capacitance IE= 0; VCB= 10V; ftes.

·With TO-220F package ·Complement to type 2SA1859/1859A APPLICATIONS ·For audio output driver and TV velocity-modulation applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline .

IC=0 IC=0.7A ; VCE=10V IC=-0.7A ; VCE=12V IE=0 ; VCB=10V;f=1MHz CONDITIONS SYMBOL 2SC4883 2SC4883A MIN 150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 180 1.0 10 10 10 60 120 30 240 MHz pF V µA µA µA VCEsat Collector-emitter saturation voltage 2SC4883 2SC4883A ICBO Coll.