| Part Number | 2SC5042 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:EN4780
NPN Triple Diffused Planar Silicon Transistor
2SC5042
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High r.
* High speed (tf=100ns typ). * High reliability (HVP process). * High breakdown voltage (VCBO=1600V). * Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5042] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-. |
2SC5042 Datasheet and Specifications PDF
The 2SC5042 is a NPN TRANSISTOR.
| Part Number | 2SC5042 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector . llector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=5A;IB=1.25 A IC=5A;IB=1.25A IC=100mA;IB=0 VEB=4V IC=0 VCB=800V IE=0 VCE=1600V; RBE=0 IC=1 A ; VCE=5V IC=5A ; VCE=5V 15 4 800 1 10 1 25 7 MIN TY. |
| Part Number | 2SC5042 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·NPN triple diffused planar silicon transistor ·High Breakdown Voltage ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . METER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A ICEO Collector Cutoff Current VCE= 800V ; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V ;. |