| Part Number | 2SC5047 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1600V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflect. e-Emitter Saturation Voltage IC= 20A; IB=5A ICBO Collector Cutoff Current VCB= 1600V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 20A; VCE= 5V 2SC5047 MIN TYP. MAX UNIT 800 V 5.0 V 1.5 V 10 μA 1.0 mA 15 25 . |
2SC5047 Datasheet and Specifications PDF
The 2SC5047 is a Silicon NPN Transistor.
Key Specifications
| Part Number | 2SC5047 Datasheet |
|---|---|
| Description | NPN TRANSISTOR |
| Manufacturer | SANYO |
| Overview |
Ordering number:EN4785A
NPN Triple Diffused Planar Silicon Transistor
2SC5047
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ). · High .
* High speed (tf=100ns typ). * High reliability (Adoption of HVP process). * High breakdown voltage (VCBO=1600V). * Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5047] 20.0 3.3 5.0 26.0 2.0 3.4 2.0 1.0 20.7 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramet. |