2SC5249 Datasheet and Specifications PDF

The 2SC5249 is a NPN Transistor.

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Part Number2SC5249 Datasheet
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switch. r Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A ICBO Collector Cutoff Current VCB= 600V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 4V 2SC5249 MIN TYP. MAX UNIT 600 V 0.5 V 1.2 V 100 μA 100 .
Part Number2SC5249 Datasheet
DescriptionSilicon NPN Transistor
ManufacturerSanken
Overview 2SC5249 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5249 600 600 7 3(Pulse6) 1.5 35(. Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 300mA VCE(sat)
*IC Characteristics (Typical) 0.5 I C / I B =5 Const. I C
* V BE Temperature Characteristics (Typical) 3 (V C E =4V) 200 mA Collector Current I C (A) Collector Current I C (A) 2 100m A 2 p) mp) e Te 25˚C (Cas se 1 I B.
Part Number2SC5249 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220F package ·High voltage switchihg transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-22. ation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; RBE=7 IC=1A;IB=0.2A IC=1A;IB=0.2A VCB=600V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IE=-0.3A ; VCE=12V VCB=10V;f=1MHz 20 6 50 MIN 600 0.5 1.2 100 100 40 MHz pF TYP. MA.